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[–] intono 0 points 18 points (+18|-0) ago 

Electrons jump freely at about 4nm (I know that easily happens in organic molecules) with little stimulation, moreover don't forget the material's work function which tells how easily an electron can be removed from it. The only obstacle I noticed when building such devices was the electrode deposition quality which at around 10nm started to be difficult to control. This was in academic grade builds for simple transistors One should consider maybe IBM's proprietary architectures, materials, and build and testing conditions.


[–] ChaoticNeutral 0 points 11 points (+11|-0) ago 

Atomic Layer Deposition makes sub 10 nm control straight forward once you have the masking down. Intel was at the ALD conference talking about 5 nm gates/electrodes.


[–] intono 0 points 2 points (+2|-0) ago  (edited ago)

That's impressive! I remember a title on single-molecule transistors some time ago.

Yeah, the masking has to be perfect, and as close as possible to the target material.